PART |
Description |
Maker |
CY7C1046BV33L-15VC CY7C1046BV33 CY7C1046BV33-10 CY |
Memory : Async SRAMs 1M x 4 Static RAM 100万4静态RAM
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor] http://
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GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器 256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC Electronic Theatre Controls, Inc.
|
GS841Z18AGT-166 GS841Z18AT-180 GS841Z18AT-180I GS8 |
4Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
GS840E18 GS840E36B-166I GS840E18B-166I GS840E32T-1 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8.5 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8.5 ns, PBGA119 4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器))
|
http:// GSI Technology, Inc.
|
M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
GS840F18AT-10I GS840F18AT-12 GS840F18AT-7.5 GS840F |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS841Z36AGT-150I GS841Z36AGT-166 GS841Z36AGT-180 G |
4Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI Technology
|
CY7C1020CV33 CY7C1020V3 CY7C1020V33 CY7C1020CV33-1 |
32K x 16 Static RAM 32K X 16 STANDARD SRAM, 15 ns, PDSO44 Memory : Async SRAMs 512K (32K x 16) Static RAM
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
GS70328TS-8IT GS7032 GS70328SJ GS70328SJ-10 GS7032 |
256K Async SRAMs Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk 32K x 8 256Kb Asynchronous SRAM 32K的8 256Kb的异步SRAM 32K x 8 256Kb Asynchronous SRAM
|
GSI[GSI Technology] Electronic Theatre Controls, Inc.
|
GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119 4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器)) 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
HSDL-1100008 HSDL-1100018 HSDL-1100007 HSDL-110001 |
IrDA 1.1 Compliant 4Mb/s 5V Transceiver. Top Option.Tape & ReelLINot Recommended for New Designs) IrDA 1.1Compliant 4Mb/s 5V Transceiver. Top Opt. 10 units/stripLINot Recommended for New Designs) IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Option.Tape & Reel<LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Option.Tape IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Opt.10 units/strip<LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Opt.10单位/条\u0026lt;LI\u0026gt;(不推荐用于新设计)
|
Ecliptek, Corp.
|
CY7C197-12VC CY7C197-12PC CY7C197-25PC CY7C197-35P |
256Kx1 Static RAM 256K X 1 STANDARD SRAM, 45 ns, PDSO24 256Kx1 Static RAM 256K X 1 STANDARD SRAM, 15 ns, PDSO24 Memory : Async SRAMs
|
Cypress Semiconductor, Corp. CYPRESS[Cypress Semiconductor]
|