| PART |
Description |
Maker |
| STI26NM60N STW26NM60N STP26NM60N STF26NM60N STB26N |
N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
|
STMicroelectronics
|
| MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| T-795 |
Line Matching Transformer 600 Ohm to 600 Ohm
|
Rhombus Industries Inc.
|
| T0905-TSPH T0905 |
General- purpose VHF/UHF Power Amplifier (135 to 600 MHz)
|
ATMEL[ATMEL Corporation]
|
| M57732L 57732L |
135-160 MHz, 12.5V, 7W, FM PORTABLE RADIO
135-160MHz 12.5V,7W,FM PORTABLE RADIO
From old datasheet system
135-160MHZ, 12.5V,7W, FM POPHTABLE RADIO
135-160MHz 12.5V /7W /FM PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| STL31N65M5 |
N-channel 650 V, 0.135 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in PowerFLAT(TM) 8x8 HV package
|
ST Microelectronics
|
| IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| BY229_SERIES_2 BY229-600127 |
Rectifier Diodes fast, soft-recovery - I<sub>O (AV)</sub> / I<sub>F (AV)</sub>: 8 A; t<sub>rr</sub>: 135 ns; V<sub>RRM</sub>: 600 V; Package: SOD59 (TO-220AC); Container: Horizontal, Rail Pack
From old datasheet system
|
NXP SEMICONDUCTORS
|
| CSB1116 CSB1116A CSB1116G CSB1116L CSB1116Y |
0.750W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 1.000A Ic, 135 - 600 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 400 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 200 - 400 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 300 - 600 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 270 hFE
|
Continental Device India Limited
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| STP25NM60N STW25NM60N STB25NM60N STF25NM60N STB25N |
20 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
20 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
N-channel 600 V, 0.130 Ω , 21 A, MDmesh?/a> II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
|
http://
STMicroelectronics
|
| JANSR2N7401 FN4571 |
6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
|
