PART |
Description |
Maker |
SIGC07T60NC |
IGBTs - HV Chips - SIGC07T60NC, 600V, 6A
|
Infineon
|
SIGC156T120R2CS |
IGBTs - HV Chips - SIGC156T120R2CS, 1200V, 100A
|
Infineon
|
SIGC81T120R2C |
IGBTs - HV Chips - SIGC81T120R2C, 1200V , 50A
|
Infineon
|
SIGC109T120R3L |
IGBTs - HV Chips - SIGC109T120R3L, 1200V, 100A
|
Infineon
|
SIGC18T60NC |
IGBTs - HV Chips - SIGC18T60NC, 600V, 20A
|
Infineon
|
SIGC68T170R3 |
IGBTs - HV Chips - SIGC68T170R3, 1700V, 50A
|
Infineon
|
SIGC25T60NC |
IGBTs - HV Chips - SIGC25T60NC, 600V, 30A
|
Infineon
|
LDD-E304NI |
0.30 SEVEN SEGMENT, DUAL DIGIT DISPLAY, 635nm RED CHIPS, GRAY FACE WITH WHITE SEGMENTS, COMMON ANODE, NO CHIPS IN DECIMALS.
|
List of Unclassifed Manufacturers
|
IGW03N120H2NBSP IGP03N120H2NBSP IGB03N120H2NBSP IG |
High Speed CMOS Logic Hex Non-Inverting Buffers 16-SOIC -55 to 125 高 -技 From old datasheet system HighSpeed 2-Technology IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO247 IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO220 IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT D2Pak 1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
|
INFINEON[Infineon Technologies AG]
|
BM-10EG88MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
BM-10EG58MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|