| PART |
Description |
Maker |
| BD442 BD439 BD441 4130 BD440 -BD441 -BD442 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??)
From old datasheet system
COMPLEMENTARY SILICON POWER TRANSISTORS
Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose
COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
http://
|
| MJF31C MJF32C MJF31C-D |
Complementary Silicon Plastic Power Transistors for Isolated Package Applications
3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
|
ONSEMI[ON Semiconductor]
|
| MJ15003 MJ15004 ON1980 |
From old datasheet system
20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS
POWER TRANSISTORS COMPLEMENTARY SILICON 20 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| TIP41C TIP42B TIP41A TIP42C TIP42A TIP41B ON2987 |
POWER TRANSISTORS COMPLEMENTARY SILICON 6 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
6 AMPERE POWER TRANSISTORS
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
http://
|
| MJD112 MJD1121 MJD112T4 MJD117 ON1996 MJD112-1 |
Complementary Darlington Power Transistors
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MJD122 MJD127 MJD127T4 ON1997 MJD122-1 MJD122T4 MJ |
From old datasheet system
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATTS
Complementary Darlington Power Transistors
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| MJE4343 MJF4343 MJE4353 ON2037 |
From old datasheet system
16 AMPERE POWER TRANSISTORS
POWER TRANSISTORS COMPLEMENTARY SILICON
|
ONSEMI[ON Semiconductor]
|
| 2SA473 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
| 2SB514 |
Silicon NPN Power Transistors
Silicon PNP Power Transistors
|
Savantic, Inc.
|
| BD234 BD238 |
Silicon PNP Power Transistors
Silicon NPN Power Transistors
|
Savantic, Inc.
|
