| PART |
Description |
Maker |
| MG200J6ES60 |
TOSHIBA GTR Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MG1200FXF1US51 |
TOSHIBA GTR Module Silicon N-Channel IGBT 东芝滋养模块硅N沟道IGBT
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MG100J1ZS40 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG100J7KS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG100Q2YS40 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG100J6ES50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG400J1US51 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG30V2YS40 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG100Q2YS11 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
| MG30J6ES50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG15G6EM1 |
GTR Module
|
Toshiba
|
| MIG25Q901H |
Integrated GTR Module
|
Toshiba
|
