| PART |
Description |
Maker |
| 2N3723 2N2787 2N706B/46 2N3409 2N5188 2N3728 |
30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-39
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-46
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
|
SEMICOA CORP
|
| CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat)
NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters
NPN/PNP Transistor Arrays
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
|
| CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五（巴西）总裁|37
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
|
Infineon Technologies AG
|
| 164-22 163-28 163-12 164-12 164-26 164-20 164-30 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | STR-5/16
晶体管|晶体管|叩| 160V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 120伏特五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 40V的五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管| npn型| 280伏特五（巴西）总裁|甲一（c）| STR-5/16
|
Ecliptek, Corp.
|
| CE1A3Q CE1A3Q-T CE1A3Q-T-A |
2000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR
COMPOUND TRANSISTOR
Hybrid transistor
TRANS DIGITAL BJT NPN 70V 2000MA 3SP-8 T/R
|
NEC Corp.
NEC[NEC]
NEC Electronics
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| TIP112T MJE15028A BUT56AW BUT56AA BUT56AN MOTOROLA |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
7 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2.5 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-220AB
3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| KTC1008 KTC1008GR KTC1008-15 |
EPITAXIAL PLANAR NPN TRANSISTOR
General Purpose Transistor
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
KEC(Korea Electronics)
Korea Electronics (KEC)
|
| BC548ABC BC547ABC ON0152 BC546 BC548C BC548 BC546B |
Amplifier Transistor NPN
From old datasheet system
CASE 29-04, STYLE 17 TO-2 (TO-226AA)
Amplifier Transistors(NPN Silicon) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
| PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体
60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
|
