PART |
Description |
Maker |
SI9801DY |
N/P-Channel 20-V (D-S) Pair N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge N-/P-Channel/ Reduced Qg/ Fast Switching Half-Bridge
|
VISAY[Vishay Siliconix]
|
SI7388DP |
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
SI7392ADP |
N-Channel Reduced Qg, Fast Switching WFET
|
Vishay Siliconix
|
SI4890DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
SI6801DQ |
N-and P-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay
|
SI4824DY |
Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
SI9802DY |
Dual N-Channel Reduced Qg/ Fast Switching MOSFET Dual N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
SI6802DQ |
20-V (D-S) Single N-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay Intertechnology,Inc. Vishay Siliconix
|
KI4300DY |
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
|
Guangdong Kexin Industrial Co.,Ltd
|
SI6820DQ |
N-Channel Reduced Qg / MOSFET with Schottky Diode From old datasheet system N-Channel, Reduced Qg, MOSFET with Schottky Diode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
WPCN381U |
Legacy-Reduced SuperI/O with Fast Infrared Port, Two Serial Ports and GPIOs
|
Winbond
|
120NQ600-1 |
Reduced RFI and EMI
|
Sangdest Microelectroni...
|