| PART |
Description |
Maker |
| MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT
100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
400 A, 600 V, N-CHANNEL IGBT
|
|
| MJE13005-TA3-T MJE13005-TF3-T MJE13005-TQ3-T |
NPN SILICON POWER TRANSISTORS 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-263AB
|
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
| KSC5039H2TU KSC5039H1 |
5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
NPN Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Bulk 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| QM400HA-2H |
400 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| 2SD662 2SD662B |
Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) 70 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| QIP0640001 |
Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts) 400 A, 600 V, N-CHANNEL IGBT
|
Littelfuse, Inc.
POWEREX[Powerex Power Semiconductors]
|
| APT4020BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.2; BVDSS (V): 400; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi, Corp.
|
| APT4014BVFR APT4014SVFR APT4014BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 28; RDS(on) (Ohms): 0.14; BVDSS (V): 400; 28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET
|
Microsemi, Corp.
Advanced Power Technology
http://
|
| 5302DG-T60-K 5302DG-T92-B 5302DG-T92-K 5302DG-TM3- |
HIGH VOLTAGE NPN TRANSISTOR WITH DIODE
2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| FZT458TA |
0.3 A, 400 V, NPN, Si, POWER TRANSISTOR
|
Diodes, Inc.
|
|
