| PART |
Description |
Maker |
| NTE1912 |
Integrated Circuit Positive 3 Terminal Voltage Regulator, 12V, 3A
|
NTE[NTE Electronics]
|
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC55V8512J-15 TC55V8512J-12 TC55V8512FT-15 TC55V85 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
From old datasheet system
(TC55V8512J/FT) 8-Bit CMOS SRAM
524,288-WORD BY 8-BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC55V16256FTI TC55V16256FTI-12 TC55V16256FTI-15 TC |
262, 144-WORD BY 16-BIT CMOS STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
(MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| KS555 KS555D |
CMOS INTEGRATED CIRCUIT
|
Samsung semiconductor
|
| UPD5753T7G-E1 UPD5753T7G-E1-A |
SiGe/CMOS Integrated Circuit
|
Renesas Electronics Corporation
|
| KS0066F00 |
CMOS Digital Integrated Circuit
|
Samsung Electronics
|
| NTE1208 |
Integrated Circuit CMOS, Phase Comparator
|
NTE[NTE Electronics]
|
| NTE1199 |
Integrated Circuit CMOS Frequency Divider
|
NTE[NTE Electronics]
|
| NTE2055 |
Integrated Circuit CMOS, 3 1/2 Digit A/D Converter
Integrated Circuit CMOS / 3 1/2 Digit A/D Converter
|
NTE Electronics
|
