| PART |
Description |
Maker |
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
| BF998 BF998W BF998R |
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| 4CX250B-M |
RADIAL BEAM POWER TETRODE
|
Communications & Power Industries, Inc.
|
| BG5120K |
Dual N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| S6F17 |
SPECIAL QUALITY PULSE AND R.F. TETRODE
|
ETC
List of Unclassifed Manufacturers
|
| BG313007 |
DUAL N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| BF5020R BF5020W BF5020WE6327 |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| CF300 |
N- Channel-GaAs-MESFET-Tetrode Depletion Mode
|
List of Unclassifed Manufacturers
ETC
|
| SV6L6GC |
High Performance Audio Beam Power Tetrode
|
Svetlana
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Intertechnology,Inc.
|
