| PART |
Description |
Maker |
| DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032S |
32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFileMEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY 4M X 8 FLASH 12V PROM, 100 ns, PDSO56
|
Intel Corporation
Intel Corp.
PROM
Intel, Corp.
|
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| PM39F020-70JCE PM39F020-55PCE PM39F020-55JCE PM39F |
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory 1兆位/ 2 4兆位5伏，只有闪存的CMOS
|
PMC-Sierra, Inc.
|
| M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| SST39VF-800A-554C-B3KE SST39VF-800A-554C-B3QE SST3 |
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Microchip Technology Inc.
Silicon Storage Technology, Inc
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| SST39SF040-70-4C-NHE SST39SF020A-70-4I-WHE SST39SF |
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Microchip Technology
|
| SST37VF512_06 SST37VF010 SST37VF010-70-3C-NH SST37 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
|
Silicon Storage Technol...
SST[Silicon Storage Technology, Inc]
Silicon Storage Technology, Inc.
http://
|
| DD28F032SA-100 DD28F032SA-070 |
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY
|
INTEL[Intel Corporation]
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
