| PART |
Description |
Maker |
| DSEE29-06CC |
HiPerDynFRED Epitaxial Diode(正向电流30AB>HiPerDynFRED外延型二极管)
HiPerDynFRED Epitaxial Diode(正向电流30A的HiPerDynFRED外延型二极管) 30 A, 300 V, SILICON, RECTIFIER DIODE
|
IXYS Corporation
IXYS, Corp.
|
| JDP2S02AFS |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
TOSHIBA Diode Silicon Epitaxial PIN Type
|
TOSHIBA[Toshiba Semiconductor]
|
| KDZ16FV KDZ12FV KDZ15FV KDZ10FV KDZ6.2FV |
SILICON EPITAXIAL PLANAR DIODE
16.2 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
SILICON EPITAXIAL PLANAR DIODE
|
KEC(Korea Electronics)
|
| 1N4149 1N4449 1N4450 1N4447 1N914 1N4454 1N4150 1N |
VC-MP-K4
Signal or Computer Diode
Silicon Epitaxial Planar Diodes
SMALL SIGNAL SWITCHING DIODE
SILICON EPITAXIAL PLANAR DIODE
|
SEMTECH[Semtech Corporation]
Microsemi
Honey Technology
Chenyi Electronics
|
| 1SV257 |
RF Varactor Diodes
Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管（用于UHF波段无线电台
Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
|
Toshiba Corporation
Toshiba Semiconductor
|
| HZH HZ9_H HZ_H HZ11_H HZ12_H HZ15_H HZ16_H HZ18_H |
3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
Diodes>Zener
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| APT30D20SG APT30D20B APT30D20B_05 APT30D20BG APT30 |
30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Advanced Power Technolo...
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| KDV262 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
| KDV350 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO)
|
KEC[KEC(Korea Electronics)]
|
| HSS4148 |
Small Signal Diode
Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator
|
Renesas Electronics Corporation
|
|
