| PART |
Description |
Maker |
| IRG4PC40UD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
| SF20A200HCI |
200V, 20A ULTRAFAST DUAL RECTIFIERS
|
KODENSHI KOREA CORP.
|
| SF20A200HPR |
200V, 20A ULTRAFAST DUAL RECTIFIERS
|
KODENSHI KOREA CORP.
|
| SF20A200HPI |
200V, 20A ULTRAFAST DUAL RECTIFIERS
|
KODENSHI KOREA CORP.
|
| WSAD92-02 |
20A,200V Ultrafast Dual Diode
|
WINSEMI SEMICONDUCTOR COMPANY LIMITED
|
| IRG4RC10KD IRG4RC10 IRG4RC10KDTRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 5A条一（c）|52AA
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FFAF60UA60DN |
60A, 600V, Ultrafast Dual Diode
60 A, 600 V, Ultrafast ll Dual Diode
|
Fairchild Semiconductor
|
| IRG4BC10UD IRG4BC10UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| MUR860 MUR840 FN2091 RURP860 RURP840 |
8A, 400V - 600V Ultrafast Diodes 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
From old datasheet system
8A/ 400V - 600V Ultrafast Diodes
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
