| PART |
Description |
Maker |
| K6F4016R6EFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6F2008T2E |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
| EM640FU16E |
256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| EM640FU16E |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| AKD4563A AK4563A AK4563AVF |
16bit 4AD/2DA APGA/ALC 3V
Low Power 16bit 4ch ADC & 2ch DAC with ALC
|
AKM
Asahi Kasei Microsystems
|
| AS6C4016 |
256K X 16 BIT SUPER LOW POWER CMOS SRAM
Fully static operation
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
Alliance Semiconductor ...
|
| HY62SF16404C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62LF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| LP62S16256FU-55LLT |
55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
