| PART |
Description |
Maker |
| M5M51008CFP M5M51008CKR-55 M5M51008CKR-55X M5M5100 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
Octal D-Type Transparent Latches With 3-State Outputs 20-SSOP -40 to 85
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| M5M51008CFP-70HI |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
MITSUBISHI
|
| M5M5V108DVP M5M5V108DFP M5M5V108DFP-70H M5M5V108DK |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
RENESAS[Renesas Electronics Corporation]
|
| M5M54R04AJ-10 M5M54R04AJ-12 M5M54R04AJ-15 D99021 |
16B, FLASH, CANS,2XAT
4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V108CFP-10H M5M5V108CFP-10X M5M5V108CFP-70H M5 |
From old datasheet system
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| TC514400J |
1048576 Word x 4 Bit DRAM
|
Toshiba
|
| M5M51008DFP M5M51008DFP-55H M5M51008DFP-70H M5M510 |
1048576位（131072 - Word-8-bit）的CMOS static RAM 1048576位（131072 - Word8位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word8位）的CMOS静态RAM
Octal D-Type Transparent Latches With 3-State Outputs 20-SO -40 to 85
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M564R16DJ-10 M5M564R16DJ-12 M5M564R16DJ-15 M5M56 |
From old datasheet system
1048576-BIT (65536-WORD BY 16-BIT) CMOS STATIC RAM 1048576位（65536字由16位）的CMOS静态RAM
Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85 1048576位（65536字由16位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| HM5118160BJ-8 HM5118160BLJ-8 |
1048576-word x 16-bit Dynamic Random Access Memory
|
Hitachi,Ltd.
|
