PART |
Description |
Maker |
FQPF10N20L |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 6.8A I(D) | TO-220F 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 6.8AI(四)|20F 200V LOGIC N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
|
IRFM220B IRFM220BTFFP001 IRFM220BD84Z |
1.13 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET 200V N-Channel MOSFET 200V N-Channel B-FET / Substitute of IRFM220A
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
|
IRF630S 6059 |
From old datasheet system N - CHANNEL 200V - 0.35 -9A-D 2 PAK MESH OVERLAY TM MOSFET N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET N - CHANNEL 200V - 0.35 Ohm -9A-D 2 PAK MESH OVERLAY MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
FQPF32N20C FQP32N20C |
200V N-Channel Advance Q-FET C-Series From old datasheet system 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
|
FQA32N20C |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
FQI10N20C FQB10N20C FQB10N20CTM FQI10N20CTU |
200V N-Channel MOSFET 200V N-Channel Advance QFET C-series
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
IRHNA57260 IRHNA54260 IRHNA58260 IRHNA57060 IRHNA5 |
200V N-CHANNEL RADIATION HARDENED POWER MOSFET 200V, N-CHANNEL
|
IRF[International Rectifier]
|
FQPF19N20C FQP19N20C FQP19N20CTSTU |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRF650 IRF650B IRFS650B IRF650BFP001 |
200V N-Channel B-FET / Substitute of IRF650A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|