| PART |
Description |
Maker |
| FDPF3860T |
100V N-Channel PowerTrench MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
N-Channel PowerTrench㈢ MOSFET 100V, 20A, 38.2mヘ
N-Channel PowerTrench? MOSFET 100V, 20A, 38.2mΩ
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FQP90N10V2 FQPF90N10V2 |
100V N-Channel Advanced QFET V2 series
100V N-Channel MOSFET 90 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRF5N3710 |
100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.028ohm, Id=45A)
|
IRF[International Rectifier]
|
| FQI7N10L FQB7N10L FQI7N10LTU FQB7N10LTM |
100V LOGIC N-Channel MOSFET
100V N-Channel Logic Level QFET
100V LOGIC N-Channel MOSFET 7.3 A, 100 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| HUF76633S3S HUF76633P3 HUF76633S3ST HUF76633S3STNL |
38A,100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 39A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 39A条（丁）|63AB
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Intersil, Corp.
|
| IRFG5110 IRFG5110P IRFG5110N IRFG5110-15 |
Simple Drive Requirements
100V, Combination 2N-2P-CHANNEL
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| FQU8P10 FQD8P10 FQD8P10TF FQD8P10TM FQU8P10TU |
100V P-Channel QFET
100V P-Channel MOSFET 6.6 A, 100 V, 0.53 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRHG563110 IRHG567110 IRHG563110P IRHG567110P IRHG |
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
|
IRF[International Rectifier]
|
| IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET
1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
| FQT7N10L FQT7N10LTF FQT7N10LL99Z |
100V N-Channel Logic Level QFET
100V LOGIC N-Channel MOSFET 1.7 A, 100 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
| OM6103ST OM6101ST OM6104ST OM6001ST OM6002SR OM600 |
400V Single N-Channel Hi-Rel MOSFET in a TO-257AA package 400V单N沟道高可靠性MOSFET的采用TO - 257AA封装
400V , 5.5Amp, N Channel MOSFET With Zener Gate Protection(400V , 5.5A,N沟道，MOS场效应管(带齐纳门保护
100V , 14 Amp, N Channel MOSFET With Zener Gate Protection(100V , 14A,N沟道，MOS场效应管(带齐纳门保护 100V的，14安培，N沟道MOSFET与齐门保护（100V的，14A条，沟道来说，MOS场效应管（带齐纳门保护）
500V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
200V Single N-Channel Hi-Rel MOSFET in a D2 package
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
100V Single N-Channel Hi-Rel MOSFET in a D2 package
400V Single N-Channel Hi-Rel MOSFET in a D2 package
500V Single N-Channel Hi-Rel MOSFET in a D2 package
POWER MOSFET IN HERMETIC ISOLATED JEDEC TO 257AA PACKAGE
Isolated Hermetic Metal Package
|
International Rectifier, Corp.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
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