| PART |
Description |
Maker |
| SGS23N60UFD SGS23N60UFDTU |
High speed switching
Ultra-Fast IGBT
Discrete, High Performance IGBT with Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| FGW30N60VD |
Discrete IGBT (High-Speed V series) 600V / 30A
|
Fuji Electric
|
| FGW50N60VD |
Discrete IGBT (High-Speed V series) 600V / 50A
|
Fuji Electric
|
| FGW30N120HD |
Discrete IGBT (High-Speed V series) 1200V / 30A
|
Fuji Electric
|
| FGW75N60HD |
Discrete IGBT (High-Speed V series) 600V / 75A
|
Fuji Electric
|
| FGW15N120VD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
| IRG4PC60U-P |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package
|
IRF[International Rectifier]
|
| SGW23N60UFD SGW23N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
Low V High speed IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SGP23N60UFTU |
Discrete, High Performance IGBT; Package: TO-220; No of Pins: 3; Container: Rail 23 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
Fairchild Semiconductor, Corp.
|
