| PART |
Description |
Maker |
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| M27C2001-55C1 M27C2001-10F1 M27C2001-10C1 M27C2001 |
256K X 8 UVPROM, 55 ns, CDIP32
256K X 8 UVPROM, 70 ns, CDIP32
256K X 8 OTPROM, 80 ns, PDIP32
256K X 8 OTPROM, 80 ns, PQCC32
2 MBIT (256KB X8) UV EPROM AND OTP ROM
|
STMICROELECTRONICS
ST Microelectronics
|
| CY7C1034DV33-8BGXC |
6-Mbit (256K X 24) Static RAM 256K X 24 STANDARD SRAM, 8 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY62147EV30LL-45BVXA CY62147EV30LL-45BVXI CY62147E |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor Corp.
|
| HY29LV400TT90I HY29LV400BT90I |
4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory 4兆位（为512k × 8/256K × 16）低压快闪记忆体
|
Hynix Semiconductor, Inc.
|
| 49LF002 SST49LF003A-33-4C-NH SST49LF003A-33-4C-WH |
MB 6C 6#20 SKT PLUG
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 384K X 8 FLASH 3V PROM, 11 ns, PQCC32
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 256K X 8 FLASH 3V PROM, 11 ns, PQCC32
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 512K X 8 FLASH 3V PROM, 11 ns, PQCC32
|
Silicon Storage Technology Inc
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| MB814265-70 MB814265-60 |
CMOS 256K ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM)
CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM) 的CMOS 256K × 16位的超页模式动态RAM的CMOS56K × 16位超级页面存取模式动态内存）
CMOS 256K ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ?16 浣??绾ч〉?㈠???ā寮????AM)
|
Fujitsu Limited
Fujitsu, Ltd.
|
| E28F004BX-B80 E28F004BX-B60 E28F004BX-T120 28F400B |
4-MBIT (256K X 16. 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY 4兆位56 × 16。为512k × 8）启动块闪存系列
OSC 5V SMT PLAS 14X9 CMOS
LENS, ROUND, RED; Colour:Red; Diameter, external:29mm RoHS Compliant: Yes
Series RR3130 round rocker switches have an ergonomic euro design and panel mounting
ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
Evaluation Kit for the MAX5944
Series RR3112 round rocker switches have an ergonomic feel and multiple circuit options
4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16/ 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Electronic Theatre Controls, Inc.
PROM
Intel Corp.
Intel Corporation
|
| M68AW256ML70ZB6 M68AW256ML55ND1 M68AW256ML55ND1E M |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM
256K X 16 STANDARD SRAM, 55 ns, PDSO44
256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| LH532100B- LH532100B-1 LH532100BD-1 LH532100BN-1 L |
CMOS 2M(256K x 8) Mask-Programmable ROM
CMOS 2M (256K x 8) MROM
|
SHARP[Sharp Electrionic Components]
|
