PART |
Description |
Maker |
MB814265-70 MB814265-60 |
CMOS 256K ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM) CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM) 的CMOS 256K × 16位的超页模式动态RAM的CMOS56K × 16位超级页面存取模式动态内存) CMOS 256K ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ?16 浣??绾ч〉?㈠???ā寮????AM)
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Fujitsu Limited Fujitsu, Ltd.
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LH532100B- LH532100B-1 LH532100BD-1 LH532100BN-1 L |
CMOS 2M(256K x 8) Mask-Programmable ROM CMOS 2M (256K x 8) MROM
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SHARP[Sharp Electrionic Components]
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CAT28LV256 CAT28LV256N-20T CAT28LV256N-25T CAT28LV |
256K-bit CMOS parallel EEPROM 250ns 256K-bit CMOS parallel EEPROM 200ns 256K-bit CMOS parallel EEPROM 300ns 256K-Bit CMOS PARALLEL E2PROM 128Kx8 EEPROM 128Kx8 EEPROM 32K X 8 EEPROM 3V, 200 ns, PQCC32
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http:// CATALYST[Catalyst Semiconductor] Intersil, Corp. Epson (China) Co., Ltd. STMicroelectronics N.V. ON SEMICONDUCTOR
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AS4C256K16FO |
5V 256K × 16 CMOS DRAM (Fast Page Mode)(5V 256K × 16 CMOS动态RAM(快速页面模式))
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Alliance Semiconductor Corporation
|
KM641003C |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
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SAMSUNG SEMICONDUCTOR CO. LTD.
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AS7C4098 AS7C34098-15TC AS7C34098-15TCN AS7C34098- |
High Speed CMOS Logic Quad 2-Input Schmitt-Triggered NAND Gates 14-SOIC -55 to 125 5V/3.3V 256K x 16 CMOS SRAM 5V/3.3V 256K × 16 CMOS SRAM 5V/3.3V 256K x 16 CMOS SRAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44 5V/3.3V 256K x 16 CMOS SRAM 256K X 16 STANDARD SRAM, 15 ns, PDSO44 Replaced by SN74LV240A : Octal Buffer/Driver With 3-State Outputs 20-SSOP -40 to 85 Replaced by SN74LV240A : Octal Buffer/Driver With 3-State Outputs 20-SOIC -40 to 85 Replaced by SN74LV240A : Octal Buffer/Driver With 3-State Outputs 20-TSSOP -40 to 85 Octal Buffers/Drivers With 3-State Outputs 20-SSOP -40 to 85 Octal Buffers/Drivers With 3-State Outputs 20-SOIC -40 to 85 Octal Buffers/Drivers With 3-State Outputs 20-TVSOP -40 to 85 SRAM - 5V Fast Asynchronous
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ALLIANCE MEMORY INC Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
AS4LC256K16EO |
3.3V 256K×16 CMOS DRAM (EDO)(3.3V 256K×16 CMOS动态RAM(扩展数据总线
|
Alliance Semiconductor Corporation
|
V62C21164096L-70BI V62C21164096L-70T V62C21164096L |
256K x 16, 0.20 um CMOS STATIC RAM 256K × 160.20微米的CMOS静态RAM
|
Mosel Vitelic, Corp.
|
A278308AL-70 A278308A A278308A-55 A278308A-70 A278 |
256K X 8 OTP CMOS EPROM 256K × 8检察官办公室的CMOS存储
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AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
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V62C3802048LL-35T V62C3802048LL-35V V62C3802048LL- |
256K X 8 STANDARD SRAM, 35 ns, PDSO32 256K X 8 STANDARD SRAM, 45 ns, PDSO32 Ultra Low Power 256K x 8 CMOS SRAM 超低功256K × 8 CMOS SRAM Ultra Low Power 256K x 8 CMOS SRAM 超低功56K × 8 CMOS SRAM
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MOSEL-VITELIC Mosel Vitelic, Corp. Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
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