PART |
Description |
Maker |
AMS3402 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
LC4256 LC4384V75T176C LC4512 LC4128 LC4064 LC4032 |
IC,COMPLEX-EEPLD,256-CELL,3.8NS PROP DELAY,QFP,100PIN,PLASTIC IC,COMPLEX-EEPLD,384-CELL,10NS PROP DELAY,QFP,176PIN,PLASTIC IC,COMPLEX-EEPLD,512-CELL,4.5NS PROP DELAY,QFP,176PIN,PLASTIC System Programmable Super Fast High Density PLDs IC,COMPLEX-EEPLD,64-CELL,3.2NS PROP DELAY,QFP,100PIN,PLASTIC IC,COMPLEX-EEPLD,32-CELL,3.2NS PROP DELAY,TQFP,48PIN,PLASTIC
|
Lattice Semiconductor Corp
|
TSM2314CXRF |
High Density Cell Design for Ultra Low On-resistance
|
TY Semiconductor Co., Ltd
|
ME2302A29T |
High-density cell design for ultra low on-resistance
|
SUNMATE electronic Co.,...
|
TSM2307CXRF |
High Density Cell Design for Ultra Low On-resistance
|
TY Semiconductor Co., L...
|
KI4923DY |
TrenchFET Power MOSFETS Advanced High Cell Density Process
|
TY Semiconductor Co., Ltd
|
WPM3012 WPM3012-3 WPM3012-3TR |
Single P-Channel, -30V, -3.1A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
WPM3005 WPM3005-3TR |
Single P-Channel, -30V, -4.1A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
STN4426 |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
|