| PART |
Description |
Maker |
| LPM9029C |
Super high density cell design
|
Lowpower Semiconductor ...
|
| AMS2301A |
Super high density cell design for extremely low
|
Advanced Monolithic Systems Ltd
|
| AMS3406 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS3407S23RG |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| QL3060-0PB456C QL3060-1PB456M QL3060-1PB456C QL306 |
60,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.
FPGA|1584-CELL|CMOS|QFP|208PIN|PLASTIC FPGA的| 1584细胞|的CMOS | QFP封装| 208PIN |塑料
FPGA|1584-CELL|CMOS|BGA|456PIN|PLASTIC
|
QuickLogic, Corp.
|
| LS14500 |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density AA-size bobbin cell
|
SAFT
|
| STN4416 |
STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST3400SRG |
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4488L |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| STN4526 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9437 |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
