| PART |
Description |
Maker |
| AMS2304 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS3400SRG |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS3406 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| ME2302A29T |
High-density cell design for ultra low on-resistance
|
SUNMATE electronic Co.,...
|
| TSM2314CXRF |
High Density Cell Design for Ultra Low On-resistance
|
TY Semiconductor Co., Ltd
|
| WPM2026 WPM2026-3 WPM2026-3TR |
Single P-Channel, -20V, -3.2A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| LS17500 |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density A-size bobbin cell
|
SAFT
|
| ISPLSI1016E ISPLSI1016E-100LJI ISPLSI1016E-125LJI |
IN-SYSTEM PROGRAMMABLE HIGH DENSITY PLD
IC,COMPLEX-EEPLD,64-CELL,13NS PROP DELAY,LDCC,44PIN,PLASTIC
|
LATTICE[Lattice Semiconductor]
|
| STN4440 |
STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4480 |
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST3400SRG |
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4526 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
