PART |
Description |
Maker |
IDT70825S_L |
HIGH SPEED 128K (8K X 16 BIT) SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?)
|
IDT
|
IDT70825L IDT70825L20G IDT70825L20GB IDT70825L20PF |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM) HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
|
IDT[Integrated Device Technology]
|
ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A |
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 八达林顿阵列 EIGHT DARLINGTON ARRAYS
|
STMicroelectronics N.V. Allegro MicroSystems STMICROELECTRONICS[STMicroelectronics]
|
CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit QDR-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 256K (32K x 8) Static RAM 256 Kb (256K x 1) Static RAM 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
MK4096P-6 MK4096N-6 MK4096N-11 MK4096N-16 MK4096P- |
4096x1-bit dynamic RAM, 250ns acces time, 375ns cycle time, max. power 450mW. 4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW. 4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW.
|
Mostek
|
EDI9LC644V1312BC EDI9LC644V1310BC EDI9LC644V1512BC |
SSRAM access:133MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:133MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:150MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:200MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:166MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:150MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:166MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:200MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
|
White Electronic Designs
|
MAX887 MAX887HC_D MAX887HESA MAX887HC/D |
100% Duty Cycle, Low-Noise, Step-Down, PWM DC-DC Converter 100% Duty Cycle, Low-Noise, Step-Down, PWM DC-DC Converter 100% Duty Cycle / Low-Noise / Step-Down / PWM DC-DC Converter CAP,3.3uF,100VDC,20-% Tol,20 % Tol
|
MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
|
IS61VPS10018-166TQ IS61VPS10018-200B IS61VPS51232- |
1024K x 18 synchronous pipeline, single-cycle deselect static RAM 512K x 32 synchronous pipeline, single-cycle deselect static RAM 512K x 36 synchronous pipeline, single-cycle deselect static RAM
|
Integrated Silicon Solution Inc
|
IDT71V67802150BQI IDT71V67802150BG IDT71V67602150P |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36,为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线,单周期取 256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect
|
Integrated Device Technology, Inc.
|
CY7C1261V18 CY7C1261V18-300BZC CY7C1261V18-300BZI |
36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
SWE81800 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
KXT311LHS |
High number of cycle
|
C&K Components
|