PART |
Description |
Maker |
PYA28C16BE-20CWM PYA28C16BE-20CWMB PYA28C16BE-20LM |
Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum
|
Pyramid Semiconductor C...
|
M14D5121632A-2K |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
IR1150ISTRPBF IR1150IPBF IR1150PBF IR1150STR |
1.5 A POWER FACTOR CONTROLLER, 200 kHz SWITCHING FREQ-MAX, PDSO8 UPFC ONE CYCLE CONTROL PFC IC UPFC ONE CYCLE CONTROL PFC IC
|
International Rectifier
|
IDT70825L IDT70825L20G IDT70825L20GB IDT70825L20PF |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM) HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
|
IDT[Integrated Device Technology]
|
UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access 8K x 8 CMOS SRAM
|
United Microelectronics Corporation ETC UMC[UMC Corporation]
|
WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Ramtron International Corporation
|
LUCL9311AP-DT LUCL9311GP-D LUCL9311GP0DT |
Line Interface and Line Access Circuit Full-Feature SLIC with High Longitudinal Balance, Ringing Relay,and GR-909 Test Access
|
http://
|
EDI9LC644V1312BC EDI9LC644V1310BC EDI9LC644V1512BC |
SSRAM access:133MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:133MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:150MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:200MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:166MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:150MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:166MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM SSRAM access:200MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
|
White Electronic Designs
|
IR2085SPBF IR2085S |
HIGH SPEED, 100V, SELF OSCILLATING 50% DUTY CYCLE, HALF-BRIDGE DRIVER 高速,100V的,自振0%的占空比,半桥驱动 HIGH SPEED/ 100V/ SELF OSCILLATING 50% DUTY CYCLE/ HALF-BRIDGE DRIVER HIGH SPEED 100V SELF OSCILLATING 50% DUTY CYCLE HALF-BRIDGE DRIVER
|
International Rectifier, Corp. IRF[International Rectifier]
|
IS61VPS10018-166TQ IS61VPS10018-200B IS61VPS51232- |
1024K x 18 synchronous pipeline, single-cycle deselect static RAM 512K x 32 synchronous pipeline, single-cycle deselect static RAM 512K x 36 synchronous pipeline, single-cycle deselect static RAM
|
Integrated Silicon Solution Inc
|
IDT71V3577S75PFG IDT71V3577SA80PFGI IDT71V3577SA85 |
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3VI / O的流量,通过输出脉冲计数器,单周期取 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3V的I / O的流量,通过输出脉冲计数器,单周期取 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
IDT Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
|
KXT311LHS |
High number of cycle
|
C&K Components
|