| PART |
Description |
Maker |
| RA55H3847M RA55H3847M-101 RA55H3847M11 |
RoHS Compliance , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA07N4047M_06 RA07N4047M RA07N4047M-101 RA07N4047M |
RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA30H4047M_06 RA30H4047M RA30H4047M-101 RA30H4047M |
RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA45H4047M_06 RA45H4047M RA45H4047M-101 RA45H4047M |
RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA30H4047M1-101 RA30H4047M111 |
RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA30H4047M11 |
RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA55H3847M RA55H3847M-101 |
RF MOSFET MODULE 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| TEA |
rohs compliance
|
Surge Components
|
| RXB |
rohs compliance
|
Surge Components
|
| G2P829RNZ-LF |
Compliance with ROHS requirements
|
Bothhand USA, LP.
|
| G4P209N-1-LF |
Compliance with ROHS requirements
|
Bothhand USA, LP.
|
