| PART |
Description |
Maker |
| TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia)
|
Toshiba Semiconductor
|
| K4S560832D |
8M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
| K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S280832D-TC_L1H K4S280832D-TC_L1L K4S280832D-TC_ |
RES, 0603, TF, 16.5R, 1%, 1/10W
128Mbit SDRAM (4M x 8Bit x 4 Banks Synchronous DRAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| W9751G8JB |
16M X 4 BANKS X 8 BIT DDR2 SDRAM
|
Winbond
|
| W971GG8JB |
16M × 8 BANKS × 8 BIT DDR2 SDRAM
|
Winbond
|
| W982504AH |
16M x 4 banks x4 bit sdram
From old datasheet system
|
Winbond
|
| K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4M513233C-SDF75 K4M513233C-SDG75 K4M513233C-SN7L |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
4M X 32BIT X 4 BANKS MOBILE SDRAM IN 90FBGA
|
SAMSUNG[Samsung semiconductor]
|
| 48SD1616 48SD1616RPFH 48SD1616RPFK 48SD1616RPFE |
256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks 16M X 16 SYNCHRONOUS DRAM, 6 ns, DFP72
|
Maxwell Technologies, Inc
|
| W632GU6KB W632GU6KB-12 W632GU6KB15I |
16M X 8 BANKS X 16 BIT DDR3L SDRAM
16M X 8 BANKS X 16 BIT DDR3L SDRAM
|
Winbond
|
