| PART |
Description |
Maker |
| NMA5108-A1M |
High Power Broadband Noise Sources 100 Hz to 300 MHz
|
Micronetics, Inc.
|
| NMA5250-A1M |
High Power Broadband Noise Sources 100 Hz to 1500 MHz
|
Micronetics, Inc.
|
| NMA5200-A1M |
High Power Broadband Noise Sources 100 Hz to 1000 MHz
|
Micronetics, Inc.
|
| NMA5111-B1T |
High Power Broadband Noise Sources 1000 MHz to 2000 MHz
|
Micronetics, Inc.
|
| NMA2512-2T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
| NMA2512-1T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
| MAX3524 |
"Low-Noise, High-Linearity Broadband Amplifier"
|
Maxim
|
| MAX2130 MAX2130EUA MAX213 MAX2130EUAT |
Broadband / Two-Output / Low-Noise Amplifier for TV Tuner Applications
Broadband, Two-Output, Low-Noise Amplifier for TV Tuner Applications 44 MHz - 878 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| BFR183W |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
|
| BFP182 |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFP183W |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BFP183W Q62702-F1503 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
