| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| S-AU50M |
UHF BAND FM POWER AMPLIFIER MODULE HAND-HELD TRANSCEIVER
TOSHIBA RF POWER AMPLIFIER MODULE
|
Toshiba Semiconductor
|
| S-AU82AVL |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 60-W COMMERCIAL UHF RADIO APPLICATIONS
|
Toshiba Corporation
Toshiba Semiconductor
|
| AFS2 |
500mW UHF RF power amplifier
|
Radiometrix Ltd
|
| MHW2727-3 |
UHF Silicon FET Power Amplifier
|
Motorola, Inc
|
| S-AU82L |
FM RF POWER AMPLIFIER MODULE for UHF BAND
|
Toshiba Semiconductor
|
| MGF7169C |
UHF BAND GaAs POWER AMPLIFIER
|
Mitsubishi Electric Corporation
|
| MHW808-1 MHW808-2 MHW808-3 |
(MHW808-1-2-3) UHF Power Amplifier Module
|
Motorola Semiconductor
|
| MGF7114C |
UHF BAND GaAs POWER AMPLIFIER
|
Mitsubishi
|
| 2SK307407 2SK3074 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| 2SC2783 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
