PART |
Description |
Maker |
IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW12G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW30G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDY15S120 |
2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDD09SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDT05BS60C IDT05S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
http:// Infineon Technologies AG
|
IDT16S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
http:// Infineon Technologies AG
|
IDC05S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies
|
IDV06S60C |
2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|