PART |
Description |
Maker |
IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW12G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH08SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDC08S60CE |
2nd generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDB10S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG Infineon Technologies A...
|
IDH04SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDT16S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
http:// Infineon Technologies AG
|
IDC04S60C |
2nd generation thinQ SiC Schottky Diode 2nd generation thinQ! SiC Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
IDC06S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies
|
IDV02S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|