PART |
Description |
Maker |
SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg,快速开关WFET ® ,VDS=30V; VGS=±20V N-Channel Reduced Qg, Fast Switching WFET N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
UD3002 |
N-Ch 30V Fast Switching MOSFETs
|
Unitpower Technology Li...
|
UD3004 |
N-Ch 30V Fast Switching MOSFETs
|
Unitpower Technology Li...
|
UD3013 |
P-Ch 30V Fast Switching MOSFETs
|
Unitpower Technology Li...
|
US3008 |
N-Ch 30V Fast Switching MOSFETs
|
Unitpower Technology Limited
|
UM3008 |
N-Ch 30V Fast Switching MOSFETs
|
ShenZhen XinDeYi Electronics Co., Ltd. Unitpower Technology Li...
|
UM3004 |
N-Ch 30V Fast Switching MOSFETs
|
ShenZhen XinDeYi Electronics Co., Ltd.
|
UD50N03 |
N-Ch 30V Fast Switching MOSFETs
|
Unitpower Technology Limited Unitpower Technology Li...
|
UM3201 |
Dual P-Ch 30V Fast Switching MOSFETs
|
ShenZhen XinDeYi Electronics Co., Ltd. Unitpower Technology Limited
|
UM3202 |
Dual N-Ch 30V Fast Switching MOSFETs
|
Unitpower Technology Limited
|
QM3001K |
P-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
TY Semiconductor Co., Ltd
|
FDMS9620S |
Dual N-Channel PowerTrench? MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
|
Fairchild Semiconductor
|