| PART |
Description |
Maker |
| BAS21M3T5G |
SOT-723 SS Switching Diode SIGNAL DIODE
High Voltage Switching Diode
|
ON Semiconductor
|
| CMPD2005S |
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SMD Switching Diode Dual: High Voltage: In Series
|
Central Semiconductor, Corp.
Central Semiconductor Corp
|
| KDS135 |
Switching Diode
SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| Q62702-A3471 BAW78M |
From old datasheet system
Silicon Switching Diode (Switching applications High breakdown voltage)
|
SIEMENS[Siemens Semiconductor Group]
|
| BAS21HT1G |
High Voltage Switching Diode 0.2 A, 250 V, SILICON, SIGNAL DIODE
|
ON Semiconductor
|
| RM300DG-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| 1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications
|
TOSHIBA
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
