| PART |
Description |
Maker |
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
| FMM300-0055P |
Trench Power MOSFET 300 A, 55 V, 0.0036 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
MOSFET Modules
|
IXYS, Corp.
IXYS Corporation
|
| FDAF59N30 |
300V N-Channel MOSFET 34 A, 300 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IXTQ69N30 IXTQ69N30P IXTT69N30P |
PolarHT Power MOSFET 69 A, 300 V, 0.049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
Discrete MOSFETs: Standard N-channel Types
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| 2SJ486ZU-TL-E 2SJ486ZU-TR-E 2SJ486 |
300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SC-59A, MPAK-3
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| 2N7002ZG-AE2-R 2N7002ZG-AL6-R 2N7002ZG-AL3-R |
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 HALOGEN FREE PACKAGE-3
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET HALOGEN FREE PACKAGE-6
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET HALOGEN FREE PACKAGE-3
|
Unisonic Technologies Co., Ltd.
|
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| BST120135 |
300 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP SEMICONDUCTORS
|
| IRFD312R |
300 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
HARRIS SEMICONDUCTOR
|
| 2N7002K-T1 |
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
|
VISHAY SILICONIX
|
| UZVN4424Z |
300 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
DIODES INC
ZETEX PLC
|
| BF999 Q62702-F1132 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz/ preferably in FM applications)
From old datasheet system
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
|
