| PART |
Description |
Maker |
| 2N7002PW115 2N7002PW |
60 V, 310 mA N-channel Trench MOSFET
|
NXP Semiconductors N.V.
|
| FDD16AN08A0 FDD16AN08A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m
N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm
N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз
N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| NX5320EH-AZ |
1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION
|
California Eastern Labs
|
| L2SK801LT1G L2SK801LT3G |
Small Signal MOSFET 310 mAmps, 60 Volts N?Channel SOT?3
|
Leshan Radio Company
|
| BSS138PW |
60 V, 320 mA N-channel Trench MOSFET
60 V, 360 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| FDI3632 FDP3632 FDB3632 |
N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhm
N-Channel UltraFET Trench MOSFET 100V, 80A, 9m Ohm
|
Fairchild Semiconductor
|
| APT12031JLL |
POWER MOS 7 1200V 30A 0.310 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| C380SX500 C380AX500 C380BX500 C380CX500 C380DX500 |
Phase Control SCR 310 Amperes Avg 800 Volts
Phase Control SCR 310 Amperes Avg 1600 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| RO2053A-1 |
310.0 MHz SAW Resonator
|
RFM[RF Monolithics, Inc]
|
| SR310 |
310.00 MHz One-Port SAW Resonator
|
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