PART |
Description |
Maker |
NX3008NBKS NX3008NBKS-15 |
30 V, 350 mA dual N-channel Trench MOSFET SMALL SIGNAL, FET
|
NXP Semiconductors N.V.
|
CM350DU-5F |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
FDD16AN08A0 FDD16AN08A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
VP0540 VP0535 VP0535N3 |
200 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 P-Channel Enhancement-Mode Vertical DMOS FETs
|
SUPERTEX INC Supertex, Inc
|
BSS138PW |
60 V, 320 mA N-channel Trench MOSFET 60 V, 360 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
SI1013R-T1-GE3 |
350 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
AD7811 AD7811YN AD7811YR AD7811YRU AD7812 AD7812YN |
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs 2.7 V to 5.5 V 350 kSPS 10-Bit 4-/8-Channel Sampling ADCs
|
AD[Analog Devices]
|
TP2535N3-G |
86 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 GREEN, TO-92(N3), 3 PIN
|
Supertex, Inc.
|
VN3515L |
150 mA, 350 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
|
VISHAY SILICONIX
|
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
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