| PART |
Description |
Maker |
| 2673000201 |
Lower Frequencies < 50 MHz
|
Fair-Rite Products Corp.
|
| 2673000101 |
Lower Frequencies < 50 MHz
|
Fair-Rite Products Corp.
|
| 2643005701 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2643000801 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2661023801 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| 2661000801 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| MRF6S21100NBR1 MRF6S21100N |
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz
|
Freescale Semiconductors
|
| BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| AP30T03GH-HF AP30T03GH-HF-14 |
Lower Gate Charge Lower Gate Charge
17 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Simple Drive Requirement
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| BAR61 BAR60 Q62702-A786 Q62702-A120 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) SILICON, PIN DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
