PART |
Description |
Maker |
TH50VSF3582AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
MMPQ2907A FFB2907A FFB2907A_1 FMB2907A FMB2907ANL |
PNP Multi-Chip General Purpose Amplifier 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
|
MCA104 |
Multi-Chip Array Two NPN and Two PNP High Speed / Medium Power Switching Transistors MULTI-CHIP ARRAY TWO NPN AND TWO PNP HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
Semelab PLC SEME-LAB[Seme LAB]
|
UMD2N |
NPN-PNP built-in resistors Multi-Chip Digital Transistor
|
SeCoS
|
SSM5H16TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
CTLM1074-M832D |
MULTI DISCRETE MODULE 垄芒 SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER MULTI DISCRETE MODULE ?SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER
|
Central Semiconductor Corp
|
CMLM7405 |
MULTI DISCRETE MODULESURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
CP705 |
Chip Form: SILICON TRANSISTOR Small Signal Transistor PNP - High Current Transistor Chip
|
Central Semiconductor Corp
|
SP506 |
Multi-Protocol Serial Transceivers 5V / Single Chip WAN Multi-Mode Serial Transceiver
|
Sipex
|
TPCF8B0107 |
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
|
Toshiba Semiconductor
|