| PART |
Description |
Maker |
| MGF0909A11 |
High-power GaAs FET(small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0921A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0911A 0911A |
From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGF0906 MGF0906B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| FLL21E060IY |
High Power GaAs FET
|
Eudyna Devices
|
| FLL21E135IX |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL2400IU-2C |
L-Band High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| FLL21E045IY |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL410IK-3C |
L-Band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL410IK-4C |
L-Band High Power GaAs FET
|
Fujitsu Microelectronics
Eudyna Devices Inc
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| FLL410IK-3C |
L-Band High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
