| PART |
Description |
Maker |
| 2SA812 2SA812M6 2SA812M4 2SA812M5 2SA812M7 2SB812- |
Silicon transistor
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
AUDIO FREQUENCY/GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | SOT-346
|
NEC
|
| NTE458 |
From old datasheet system
N-Channel Silicon JFET General Purpose, Low Noise, Audio Frequency Amplifier
N-Channel Silicon JFET General Purpose Low Noise Audio Frequency Amplifier
|
NTE[NTE Electronics]
|
| HN2C01FE |
Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1586-GR |
Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA116307 2SA1163 |
Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| HN1B01F HN1B01FU-GR HN1B01FU-Y HN1B01F-Y |
Audio-Frequency General-Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA158607 |
Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1015L A1015 2SA1015 |
PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HN3B01F |
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1832 E000567 |
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
