PART |
Description |
Maker |
AOK42S60 |
600V 39A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
IRGPC50FD2 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V,Ic=39A)
|
IRF International Rectifier
|
APT6035BVR |
POWER MOS V 600V 18A 0.350 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6045SVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 600V 15A 0.450 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT6015JVR |
POWER MOS V 600V 35A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
APT6015B2VR APT6015 |
POWER MOS V 600V 38A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT60M75JFLL |
POWER MOS 7 600V 58A 0.075 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
APT6029BLL |
POWER MOS 7 600V 21A 0.290 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
APT6030BN APT6033BN |
POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
AOWF7S60 AOW7S60 |
600V 7A a MOS TM Power Transistor
|
Alpha & Omega Semiconductors
|