| PART |
Description |
Maker |
| 1217 1213 1216 1218 1215 1214 5152 |
SCHEIBENLAEUFERMOTOR MIT GETRIEBE 120
SCHEIBENLAEUFERMOTOR MIT GETRIEBE 12 1
SCHEIBENLAEUFERMOTOR MIT GETRIEBE 78 1
SCHEIBENLAEUFERMOTOR MIT GETRIEBE 206 1
SCHEIBENLAEUFERMOTOR MIT GETRIEBE 50 1
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
SCHEIBENLAEUFERMOTOR MIT GETRIEBE 25 1 SCHEIBENLAEUFERMOTOR麻省理工学院的传动装5 1
|
Keystone Electronics, Corp.
|
| SFH3410-3_4 SFH3410-2_3 SFH3410-1_2 SFH3410 SFH341 |
NPN-Si-Fototransistor mit Vλ Charakteristik
NPN-Si-Fototransistor mit V楼毛 Charakteristik
NPN-Si-Fototransistor mit Vル Charakteristik
|
OSRAM GmbH
|
| SFH900-2 SFH900 SFH900-1 SFH900-A |
6 V, low-cost miniature reflex optical sensor
SFH900-A LOW-COST MINIATURE REFLEX OPTICAL SENSOR APPNOTE26 POSITION, LINEAR SENSOR-DIFFUSE, 1-1mm, 3.50mA, RECTANGULAR, SURFACE MOUNT
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2N4854U 2N4854 2N3838 JAN2N3838 JAN2N4854 JAN2N485 |
NPN PNP Complimentary; Package: 6_PIN_Flatpack; 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2N1122 2N1405 2N1407 2N1101 2N1140 2N1535 2N1472 2 |
TRANSISTOR | BJT | PNP | 11V V(BR)CEO | 50MA I(C) | TO-24
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-12
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-22
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-9
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3.5A I(C) | IST-3RT-1/2
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50A I(C) | TO-36
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 7.5A I(C) | TO-82
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 7.5A I(C) | TO-82
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-3
TRANSISTOR | BJT | PNP | 110V V(BR)CEO | TO-5
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-5
TRANSISTOR | BJT | NPN | 25MA I(C) | TO-22VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-3 晶体管|晶体管|进步党| 50V五（巴西）总裁| 7A条一（c）|
5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 12V的五（巴西）总裁| 100mA的一（c）|
5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 65V的五（巴西）总裁|5A一（c）|6
TRANSISTOR | BJT | PNP | 15A I(C) | TO-36
TRANSISTOR | BJT | PNP | 38V V(BR)CEO | 15A I(C) | TO-41
|
NXP Semiconductors N.V.
Microsemi, Corp.
|
| WL12 |
Photoelectric reflex switches
|
SENSICK
|
| PEMD14 PUMD14 PEMD14-PUMD14-15 |
NPN/PNP resistor-equipped transistors; R1 = 47 kW, R2 = open
NPN-PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
NPN/PNP resistor-equipped transistors R1 = 47 kW, R2 = open
|
NXP Semiconductors N.V.
|
| XP03312 |
Silicon NPN(PNP) epitaxial planer transistor 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
Panasonic Semiconductor
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| PUMB19 PUMD19 PEMD19 PEMH19 PUMH19 PEMB19 PEMD1911 |
NPN/PNP resistor-equipped transistors R1 = 22 kW, R2 = open
NPN/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
NPN/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open; Package: SOT666 (SS-Mini); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
PEMD19; PUMD19; NPN/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| STS01DTP06 STS01DTP06T4 |
3 A, 30 V, NPN AND PNP, Si, POWER TRANSISTOR
DUAL NPN-PNP COMPLEMENTARY BIPOLAR TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
