| PART |
Description |
Maker |
| K522H1HACF-B050 |
2Gb (128M x16) NAND Flash 1Gb (64M x16 ) Mobile DDR SDRAM
|
Samsung semiconductor
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| W986416CH W986416CH-8H |
1M x 16 BIT x 4 BANKS SDRAM
x16 SDRAM
|
Winbond Electronics Corp
|
| HYB39S128400CT-7 HYB39S128160CT-7 HYB39S128800CT-7 |
128Mbit Synchronous DRAMs
SDRAM Components - 128Mb (16Mx8) PC133 3-3-3
SDRAM Components - 128Mb (8Mx16) PC133 3-3-3
SDRAM Components - 128Mb (32Mx4) PC133 3-3-3
128-MBit Synchronous DRAM
|
Infineon
|
| MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400（x16）的快闪记忆体和4M（x16）的静态RAM
|
Spansion, Inc.
|
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
| HYS64V8220GU HYS72V8220GU HYS72V4200GU HYSV4200GU |
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3 4米64/72-Bit一银行内存模块3.3 8米64/72-Bit 2银行内存模块
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 8M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| W981208BH-8H W981208BH-7 |
4M x 4 BANKS x 8 BIT SDRAM
x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| HYB39S64160BTL-7.5 |
x16 SDRAM x16内存
|
Infineon Technologies AG
|
| MT48LC32M16A2 MT48LC128M4A2 |
512Mb x4, x8, x16 SDRAM
|
Micron Technology
|
| IS43DR81280B |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
