| PART |
Description |
Maker |
| LH5118-10 LH5118HN-10 LH5118D-10 LH5118H-10 LH5118 |
x8 SRAM
x8SRAM
|
|
| HM628128LP-7 HM628128LP-7SL HM628128LT-8SL HM62812 |
x8 SRAM x8的SRAM
Non-reflective terminators (with SMA connectors); HRS No: 353-0017-3 50
x8SRAM
|
Everlight Electronics Co., Ltd.
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416 |
4M High Speed SRAM (256-kword x 16-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
SRAM
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| AS5C4009LLDG-100/XT AS5C4009LLDG-100/IT AS5C4009LL |
512K*8 SRAM ultra Low power SRAM AVAILABLE AS MILITARY SPECIFICATION
x8 SRAM x8的SRAM
|
Austin Semiconductor, Inc
|
| GM76U256C GM76U256CE GM76U256CL GM76U256CLE GM76U2 |
x8 SRAM 32K X 8 STANDARD SRAM, 120 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| AS7C164 AS7C164-20 AS7C164-20JC AS7C164-12 AS7C164 |
8K X 8 STANDARD SRAM, 12 ns, PDSO28
SRAM - 5V Fast Asynchronous
5V 8K X 8 CMOS SRAM
|
ALSC[Alliance Semiconductor Corporation]
|
| AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AS7C33128NTD18B AS7C33128NTD18B-200TQIN AS7C33128N |
3.3V 128Kx18 Pipelined SRAM with NTD 128K X 18 ZBT SRAM, 3 ns, PQFP100
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
