| PART |
Description |
Maker |
| AFT26H250W03SR6 AFT26H250W03S-24S |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
| AFT21H350W03SR6 |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
| LET9085 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY
RF POWER TRANSISTORS Ldmos Enhanced Technology
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| LET9006 |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMicroelectronics
|
| LET21004 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
STMICROELECTRONICS[STMicroelectronics]
|
| BLF900S-110 BLF900-110 |
Base station LDMOS transistors UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit
RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
