PART |
Description |
Maker |
ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247 TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 16A条一(c)| TO - 220AB现有
|
Microsemi, Corp.
|
BSM300GB120DLC |
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,625A I(C)
|
Eupec
|
P6MU-XXXXZH52 P6MU-0505ZH52 P6MU-053R3ZH52 P6MU-12 |
Input voltage:5V, output voltage /-5V ( /-100mA), 5.2KV isolated 1W unregulated dual output 5.2 KV ISOLATED 1W UNREGULATED DUAL OUTPUT DIP14 5.2千伏隔震1W的未稳压双输出DIP14 Input voltage:24V, output voltage /-7.2V ( /-69mA), 5.2KV isolated 1W unregulated dual output
|
PEAK[PEAK electronics GmbH] http://
|
7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C) From old datasheet system
|
Fuji Semiconductors, Inc.
|
GT8Q102SM |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-252VAR 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 8A条一(c)|52VAR
|
Panasonic Industrial Solutions
|
HGT1S1N120CNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 6.2AI(丙)|63AB
|
Intersil, Corp.
|
F15A12GF |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 15A I(C) | TO-247 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展|5A一(c)|47
|
Panasonic Industrial Solutions
|
CT15AM24E |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 15A I(C) | TO-247VAR 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展|5A一(c)|47VAR
|
Chicago Miniature Lighting, LLC
|
FS8R12KF |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五(巴西)国际消费电子展| 8A条一(c
|
ECM Electronics, Ltd.
|
QM50TB24 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块| 3 - PH值大桥| 1.2KV五(巴西)总裁| 50A条一(c
|
Mitsubishi Electric, Corp.
|
IXGP15N120B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 30A条一(c)| TO - 220AB现有
|
Maxim Integrated Products
|