PART |
Description |
Maker |
SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
CY62137V CY62137VLL-55ZI CY62137VLL-70ZE CY62137VL |
2-Mbit (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PDSO44
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
M27C202-80F1 M27C202-70K6 M27C202-120F6 M27C202-90 |
128K X 16 OTPROM, 80 ns, PDSO40 128K X 16 OTPROM, 90 ns, PQCC44 128K X 16 UVPROM, 100 ns, CDIP40 2 MBIT (128KB X16) UV EPROM AND OTP EPROM
|
STMICROELECTRONICS ST Microelectronics
|
UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL Architecture x4 EDO Page Mode DRAM 512K (32K x 16) Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
CY14B101K-SP45XIT CY14B101K-SP25XCT CY14B101K-SP35 |
1 Mbit (128K x 8) nvSRAM With Real-Time Clock 128K X 8 NON-VOLATILE SRAM, 35 ns, PDSO48 1 Mbit (128K x 8) nvSRAM With Real-Time Clock 128K X 8 NON-VOLATILE SRAM, 45 ns, PDSO48
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GLS29EE010-70-4C-WHE GLS29EE010-70-4C-NHE-T SST29E |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32 1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PDSO32 128K X 8 FLASH 5V PROM, 70 ns, PDSO32 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
CY7C1350G06 CY7C1350G-250BGXI CY7C1350G-250BGXC CY |
4-Mbit (128K x 36) Pipelined SRAM with NoBL⑩ Architecture 4-Mbit (128K x 36) Pipelined SRAM with NoBL?/a> Architecture 4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR-II SRAM 4-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Flow-through SRAM with NoBL Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM 256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc. Electronic Theatre Controls, Inc.
|
M68AF127BL55MC6 M68AF127BMC M68AF127B M68AF127BB M |
1Mbit 128K x8, 5V Asynchronous SRAM 1Mbit28K的8V的异步SRAM AML22 Series, Electronic Control Pushbutton, Square, Standard Bezel, Lighted, 1 LED, DPDT, Momentary Action, Snap in panel mount 1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
CY14B101LA-ZS25XI CY14B101LA-ZS25XIT CY14B101LA-ZS |
1 Mbit (128K x 8) nvSRAM
|
Cypress Semiconductor
|
CY14B101L-SZ25XCT CY14B101L-SZ35XCT CY14B101L-SZ45 |
1-Mbit (128K x 8) nvSRAM
|
Cypress Semiconductor Corp.
|
M24L216128SA-70BEG M24L216128SA-70BIG M24L216128SA |
128K X 16 PSEUDO STATIC RAM, 55 ns, PDSO44 0.400 INCH, LEAD FREE, TSOP2-44 2-Mbit (128K x 16) Pseudo Static RAM
|
Sharp Electronics, Corp. Elite Semiconductor Memory Technology Inc.
|