PART |
Description |
Maker |
C3A110650R0K5K5 |
Anaren High Frequency Chip Resist
|
Anaren Microwave
|
PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET From old datasheet system Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
PM50CSE060 |
FLAT-BASE FLAT-BASE TYPE INSULATED PACKAGE From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
1SS390 |
Extremely Small surface mounting type. (EMD2) High reliability.
|
TY Semiconductor Co., L...
|
PC367N1J000F |
Mini-Flat Package High CMR, AC Input, Low Input Current Type Photocoupler
|
Sharp Electrionic Components
|
JV1-12V JV1PF-S-100V JV1PF-S-12V JV1PF-S-18V JV1PF |
JV-relay. Flat type power relay. 1 form C. Coil voltage 100 V DC. Sealed type. JV-relay. Flat type power relay. 1 form A, standard type. Coil voltage 100 V DC. Sealed type. JV-relay. Flat type power relay. 1 form A, standard type. Coil voltage 100 V DC. Flux-resistant type. JV-relay. Flat type power relay. 1 form A, hing capacity type. Coil voltage 100 V DC. Sealed type. JV-relay. Flat type power relay. 1 form A, hing capacity type. Coil voltage 100 V DC. Flux-resistant type. JV-relay. Flat type power relay. 1 form C. Coil voltage 100 V DC. Flux-resistant type.
|
Nais(Matsushita Electri... Mitsubishi Electric, Corp. Honeywell International, Inc. Nais(Matsushita Electric Works) Matsushita Electric Works(Nais)
|
UR5HC703 |
Extremely Low-Power Keyboard Encoder(???????????????
|
Semtech Corporation
|
LPW-551202F LPW-551202G LPW-551202H LPW-551202J LP |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
PMV56XN |
UTrenchMOS extremely low level FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
FESD05LCDS |
Extremely Low Capacitance TVS Diode
|
FutureWafer Tech Co.,Lt...
|
CM10MD3-12H |
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|