| PART |
Description |
Maker |
| M58LR128F-ZB M58LR128F-ZBE M58LR128F-ZBF M58LR128F |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
| M29DW128F_06 M29DW128F M29DW128F60NF1 M29DW128F60N |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M30L0R7000T0ZAQE M30L0R7000B0ZAQ M30L0R7000XX M30L |
AB 35C 7#12,28#16 PIN RECP
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014 128兆位兆x16插槽，多银行，多层次，多突发），1.8V电源快闪记忆
|
意法半导
STMicroelectronics N.V.
|
| M58LW128H115ZA1 |
128 MBIT(8MB X16, UNIFORM BLOCK, BURST) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29DW640D |
64 Mbit (8Mb x8 or 4Mb x16 / Multiple Bank / Page / Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
|
| M36L0T7050B2 M36L0T7050B2ZAQ M36L0T7050B2ZAQE M36L |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
Numonyx B.V
|
| M58LR128HD70ZB5E M58LR128HD70ZB5U |
128 Mbit (x16, Mux I/O, Multiple Bank, Multilevel interface, Burst)
|
Numonyx B.V
|
| M30LW128D M30LW128D110N1T M30LW128D110N6T M30LW128 |
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
|
ST Microelectronics
意法半导
|
| 42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| M36W0R6050B0ZAQT |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
|
| M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位（x16插槽，多银行，多层次，多突发28兆位闪存（突发）移动存储芯片.8V电源，多芯片封装
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| M36W432-ZAT M36W432B85ZA1T M36W432B70ZA1T M36W432T |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，开机区块快闪记忆体兆位256K x16的SRAM，多个存储产
|
STMicroelectronics N.V.
意法半导
|
