PART |
Description |
Maker |
IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW40G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW30G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH06SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDT05S60C08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG Infineon Technologies A...
|
IDD06SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDT10S60C IDT10BS60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
Integrated Device Technology Infineon Technologies AG
|
IDC05S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies
|
IDC06S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies
|
IDD08SG60C IDD08SG60C-13 |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies A...
|