| PART |
Description |
Maker |
| MHPA21010 |
MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier
|
Motorola
|
| MRF21060 |
MRF21060, MRF21060R3, MRF21060SR3 2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF6S21100H MOTOROLAINC-MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W?CDMA Lateral N?Channel RF Power MOSFET
|
Motorola
|
| PTFA211801E PTFA211801F |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTFA212002E |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| MAPLST2122-030CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
|
Tyco Electronics
|
| PTFA211001E |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PTFB211503EL PTFB211503FL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTFB211803EL PTFB211803FL |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
